半导体物理与器件第四版课后习题答案6

半导体物理与器件第四版课后习题答案

______________________________________________________________________________________

Chapter 6

6.1

no N15d 5 10cm 3

n2i 1.5 1010

p

2

3o N 1015

4.5 104cm d5 (a) Minority carrier hole lifetime is a constant.

pt 7p0 2 10s Rp4o

11po

4.5 10 2.25 10p0

2 10 7

cm 3s 1 (b)

R

po p

4.5 104 1014

po p0

2 10 7

5 1020cm 3s 1

_______________________________________ 6.2

po Na 2 1016cm 3

n n2i 1.8 106

2

op

16 1.62 10 4cm 3

o2 10(a) R

n5 1014

7 1021cm 3s 1 n05 10

(b)

Rpo

no

p

no

pt

nt

n0

pon

2 1016 7

ptn0 4

5 10

o1.62 10 6.17 1013s

_______________________________________ 6.3 (a) Recombination rates are equal

nop

o

nO pO no Nd 1016cm 3

n2i 1.5 1010

p

2

o n

2.25 104cm 3

o1016

Then

1016

2.25 10410 6

nO20 which yields

nO 8.89 10 6s (b) Generation rate = recombination rate Then

G 2.25 104 20 10 6

1.125 10

9

cm 3s 1 (c)

R G 1.125 109cm 3s 1

_______________________________________ 6.4

hc 6.625 10 34 3 108

(a) E h

6300 10 10

or

E 3.15 10 19J; energy of one photon Now

1 W = 1 J/s 3.17 1018photons/s Volume = (1)(0.1) = 0.1 cm3 Then

g 3.17 1018

0.1

3.17 1019 e-h pairs/cm3-s (b)

n p g 3.17 1019 10 10 6

or

n p 3.17 1014cm 3

_______________________________________ 6.5

We have

p t F gppp p

and

Jp e pp eDp p The hole particle current density is

F Jp

p

e p

p Dp p Now

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