车充TYPE-C方案 LM5175 +WT6630P

5

4

3

2

1

Vin D

R122 0R/2512 5Vmin.~25Vmax. R102 52.3K D101 R103 B0540WS/SOD-323 2.2R C101 220uF C102 0.1uF Schottky R104 10R C104 0.1uF CCM, Hiccup Enabled C103 0.1uF 1 2 3 4 5 SLOPE Fsw= 400kHz 6 7 C106 100pF Soft start time: 7.52ms 8 9 10 R107 N/A COMP 12 R105 93.1K C105 39nF R106 69.8K C107 220pF C108 47nF C109 N/A C110 N/A Vout 13 14 ISNS(+) R108 10R Vout C111 0.22uF VCC IO2 11 EN/UVLO R101 200K R117 4.7R UVLO: 5.5V U101 LM5175 EN/UVLO VIN VINSNS MODE DITH RT/SYNC SLOPE SS COMP AGND FB VOSNS ISNS(-) PAD ISNS(+) SW1 HDRV1 BOOT1 LDRV1 BIAS VCC PGND LDRV2 BOOT2 HDRV2 SW2 PGOOD CS CSG 28 27 HDR1 26 25 LDR1 24 23 C114 1uF 22 21 LDR2 20 19 HDR2 18 17 CS 16 15 C112 100pF R113 100 R114 100 OCP:>6.2A C113 0.1uF SW2 R1 0R C1 100nF/50V C2 47uF/50V LDR1 R116 20K D103 1N4148 BIAS R119 4.7R D102 VCC 1N4148 L101 4.5uH/1890 Q103 BSZ042N06NS LDR2 TSDSON-8 FL R120 4.7R C116 0.1uF HDR1 Q101 BSZ042N06NS HDR2 TSDSON-8 FL SW2 R118 4.7R Q102 BSZ042N06NS TSDSON-8 FL ISNS(+) C117 220uF C118 0.1uF

Vout D

V+

Q1 PMOS

VBUS R121 10R C7 33nF R7 30K

Q104 BSZ042N06NS BIAS TSDSON-8 FL

C115 0.22uF IO2

IO2

R6 20K

C

C

C10 TBD R5 10K R4 5mR

V-

R115 10m/2512 1 2 3 4 C3 4.7uF C4 100nF 5 6 DSIC VSS

U1 WT6630P VCC CATH GPIO3/Fault/ADC4 FB ISIS+ CC2 14 13 CATH 12 11 10 9 8 FB C6 1uF R3 5K1

GND

GPIO2/Gate/ADC3 VDD GPIO0/SDA/Tx/T2EX GPIO1/SCL/Rx/ADC2 CC1 R2 47R

B

B

COMP Q2 N/A

R8 N/A

7

CATH R9 N/A C9 N/A C8 N/A FB

CC1 C5 390pF Z1 TVS/20V

A

A

Weltrend Semiconductor, Inc. Title Size B Date: 5 4 3 2

DC-DC_EVB Document Number EVB_SOP10 Tuesday, December 29, 2015 Sheet 1

Rev

1.0 0 of 1

车充TYPE-C方案 LM5175 +WT6630P

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