N-Channel Enhancement Mode Power MOSFET

==

AF4928N

Absolute Maximum Ratings

Symbol Parameter VDSVoltage VGSVoltage

Rating Units

30 ±20 TID Continuous Drain Current (Note 1) AA

TAIDMDrain Current (Note 2)Total Power Dissipation 2 W

PD TA=25ºC Linear Derating Factor TSTG Storage Temperature Range -55 to 150 ºC T Operating Junction Temperature Range -55 to 150 ºC Maximum Units Thermal Data

Symbol Parameter Resistance Junction-ambient (Note 1) Max.

Electrical Characteristics at TJ=25ºC unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSSBreakdown VoltageVGS=0V, IDBreakdown Voltage Temperature Reference to 25C,

oC BVDSS / TJ

I=1mA Coefficient

VGS=10V, IDStatic Drain-Source

RDS(ON) m On-Resistance (Note 3) VGS=4.5V, IDV Gate Threshold Voltage V=V, IgfsVDS=10V, IDDrain-Source Leakage Current

VDS=30V, VGS(T=25oC)

uA IDSS

Drain-Source Leakage Current

VDS=24V, VGS(TJ=70oC)

IGSSLeakage VGSQGate Charge (Note 3)ID=6.8A,

VDS=24V, QCharge nC

Qgd(“Miller”) VGS=4.5V t Turn-On Delay Time (Note 3)VDS=15V,

ID=1A, tTime ns

RG=3.3 , VGS=10V td(off) Turn-Off Delay Time - 18 - RD=15 tfCCapacitance VGS=0V,

VDS=25V, CossCapacitance pF f=1.0MHz CrssTransfer RGate Resistance f1.0MHz

Source-Drain Diode

Symbol Parameter Test Conditions Min.Typ. Max. Unit V Forward On Voltage (Note 3) I=1.7A, VIS=6.8A, VGS=0V, tRecovery Time (Note 3)dl/dt=100A/µs Q Reverse Recovery Charge Note 1: Surface mounted on 1 in copper pad of FR4 board; 135C/W when mounted on Min. copper pad.

Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.

Anachip Corp.

www.1mpi.com Rev. 1.0 Oct 13, 2005