® MOSFET

ossCrssRg

Reverse Transfer CapacitanceGate Resistance

f = 1MHzf = 1MHz

1501.3

250

pF

Switching Characteristics

td(on)trtd(off)tfQgQgQgsQgd

Turn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Total Gate Charge at VGS = 10VTotal Gate Charge at VGS = 5VGate to Source Gate ChargeGate to Drain “Miller”Charge

VDS = 20V, ID = 12.8A, VDD = 20V, ID = 12.8AVGS = 10V, RGEN = 4.5

1114277351967

202542144927

nsnsnsnsnCnCnCnC

Drain-Source Diode Characteristics and Maximum Ratings

VSDtrrQrr

Source to Drain Diode Forward VoltageVGS = 0V, IS = 12.8A (note 2)Reverse Recovery TimeReverse Recovery Charge

IF = 12.8A, diF/dt = 100A/µs

0.84199.5

1.22919

VnsnC

Notes:

1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.

a) 50°C/W when mounted on a 1in2 pad of 2 oz copper

b) 125°C/W when mounted on a minimum pad .

Scale 1:1 on letter size paper

2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

3: Starting TJ = 25°C, L = 3mH, IAS = 10A, VDD = 40V, VGS = 10V.