Integrated Circuits集成电路(英汉翻译)
英语翻译的汉英对照
Integrated Circuits集成电路 The Integrated Circuit
Digital logic and electronic circuits derive their functionality from electronic switches called transistor. (数字逻辑和电子电路由称为晶体管的电子开关得到它们的(各种)功能。)Roughly speaking, the transistor can be likened to an electronically controlled valve whereby energy applied to one connection of the valve enables energy to flow between two other connections.By combining multiple transistors, digital logic building blocks such as AND gates and flip-flops are formed. Transistors, in turn, are made from semiconductors. (粗略地说,晶体管好似一种电子控制阀,由此加在阀一端的能量可以使能量在另外两个连接端之间流动。通过多个晶体管的组合就可以构成数字逻辑模块,如与门和触发电路等。而晶体管是由半导体构成的。)Consult a periodic table of elements in a college chemistry textbook, and you will locate semiconductors as a group of elements separating the metals and nonmetals.They are called semiconductors because of their ability to behave as both metals and nonmetals.(查阅大学化学书中的元素周期表,你会查到半导体是介于金属与非金属之间的一类元素。它们之所以被叫做半导体是由于它们表现出来的性质类似于金属和非金属。)
A semiconductor can be made to conduct electricity like a metal or to insulate as a nonmetal does. These differing electrical properties can be accurately controlled by mixing the semiconductor with small amounts of other elements. This mixing is called doping.(可使半导体像金属那样导电,或者像非金属那样绝缘。通过半导体和少量其它元素的混合可以精确地控制这些不同的电特性。这种混合技术称之为“半导体掺杂”。)
A semiconductor can be doped to contain more electrons (N-type) or fewer electrons (P-type). Examples of commonly used semiconductors are silicon and germanium. Phosphorous and boron are two elements that are used to dope N-type and P-type silicon, respectively. (半导体通过掺杂可以包含更多的电子(N型)或更少的电子(P型)。常用的半导体是硅和锗,N型硅半导体掺入磷元素,而P型硅半导体掺入硼元素。 )
A transistor is constructed by creating a sandwich of differently doped semiconductor layers. The two most common types of transistors, the bipolar-junction transistor (BJT) and the field-effect transistor (FET) are schematically illustrated.This figure shows both the silicon structures of these elements and their graphical symbolic representation as would be seen in a circuit diagram. The BJT shown is an NPN transistor, because it is composed of a sandwich of N-P-N doped silicon.(不同掺杂的半导体层形成的三明治状夹层结构可以构成一个晶体管,最常见的两类晶体管是双极型晶体管(BJT)和场效应晶体管(FET),这些晶体管的硅结构,以及它们用于电路图中的符号。BJT是NPN型晶体管,因为由N—P—N掺杂硅三层构成。)When a small current is injected into the base terminal, a larger current is enabled to flow from the collector to the emitter.The FET shown is an N-channel FET, which is composed of two N-type regions separated by a P-type substrate. When a voltage is applied to the insulated gate terminal, a current is enabled to flow from the drain to the source. It is called N-channel, because the gate


