AO3419
美国万代AO3419参数文档PDF
AO3419 20V P-Channel MOSFET General Description The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.5A < 85m < 102m < 140m HBM Class 2 SOT23 Top View Bottom View D D D G S G S G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±12 -3.5 -2.8 -17 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units ° C/W ° C/W ° C/W ｈｔｔｐ：／／ｗｗｗ．ｃｘｔｋｅ．ｃｏｍ ＱＱ：２３５５６０８０６８ 电话：１３５１０６６６８２０ 深圳市信德意电子有限公司
