S9015LT1 贴片式-SOT封装-三极管
(PNP) S9015 TRANSISTOR
FEATURES
Complementary to S9014 z
MARKING: M6
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SOT-23 Plastic-Encapsulate Transistors
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MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
VCBO VCEO VEBO IC PC Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Units -50 -45 -5 -0.1 0.2 150 -55-150
V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
Test conditions IC= -100μA, IE=0
MIN
TYP
MAX
UNIT
IC = -0.1mA, IBIE=-100μA, IC=0
VCB=-50 V, IEμA VEB= -5V, ICμA VCE=-5V, IC= -1mA
200
1000 -0.3
V
VCEC=-100mA, IB= -10mA
VBEC=-100mA, IBfT
VCE=-5V, IC= -10mA
MHz
f=30MHz
CLASSIFICATION OF hFE Rank Range
