IPB100N06S3L-04中文资料
Parameter
Symbol
Conditions
min.
Thermal characteristics2)
Thermal resistance, junction - caseThermal resistance, junction - ambient, leaded
SMD version, device on PCB
RthJCRthJARthJA
minimal footprint6 cm2 cooling area4)
Electrical characteristics, at Tj=25 °C, unless otherwise specifiedStatic characteristics
Drain-source breakdown voltageGate threshold voltageZero gate voltage drain current
V(BR)DSSVGS=0 V, ID= 1 mAVGS(th)IDSS
VDS=VGS, ID=150 µAVDS=55 V, VGS=0 V, Tj=25 °C
VDS=55 V, VGS=0 V, Tj=125 °C2)
Gate-source leakage currentDrain-source on-state resistance
IGSSRDS(on)
VGS=16 V, VDS=0 VVGS=5 V, ID=59 AVGS=5 V, ID=59 A, SMD versionVGS=10 V, ID=80 AVGS=10 V, ID=80 A, SMD version
551.2--1.60.01
-2.21
µAV
--------0.7626240
K/W
Valuestyp.
max.
Unit
------
114.94.63.12.8
1001006.25.93.83.5
nAm
