TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII)

2SK2611

Unit: mm

DC DC Converter, Relay Drive and Motor Drive Applications

z Low drain source ON resistance z High forward transfer admittance z Low leakage current

: RDS (ON) = 1.1 (typ.) : |Yfs| = 7.0 S (typ.)

: IDSS = 100 μA (max) (VDS = 720 V)

z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Drain source voltage

VDSSV

Drain gate voltage (RGS = 20 k DGR Gate source voltage Drain current

DC (Note Pulse (Note 1)

VGSSIDGATE

2. DRAIN (HEAT SINK) IDPSOURCE

PDDrain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC EASAvalanche current

Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

―

IARTOSHIBA 2-16C1B EARTchWeight: 4.6 g (typ.) Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Thermal resistance, channel to case Thermal resistance, channel to ambient

Rth (ch c) Rth (ch a)

0.833 50

°C / W°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 , IAR = 9 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.