LDMOS RF Power Field Effect Transistor90 W, 2110–2170 MHz

Description

The PTF210901 is an internally matched 90 W GOLDMOS FETintended for WCDMA applications from 2110 to 2170 MHz. Full goldmetallization ensures excellent device lifetime and reliability.

Features

Internal matching for wideband performanceTypical two–carrier 3GPP WCDMAperformance

- Average output power = 19 W at –37 dBc- Efficiency = 25%

Typical CW performance

- Output power at P–1dB = 105 W- Gain = 15 dB- Efficiency = 53%

Integrated ESD protection: Human Body Model,Class 1 (minimum)

Excellent thermal stability, low HCI driftCapable of handling 10:1 VSWR at 28 V,90 W (CW) output power

PTF210901EPackage 30248

ESD: Electrostatic discharge sensitive device — observe handling precautions!

RF Performance at TCASE = 25°C unless otherwise indicated

WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD

= 28 V, IDQ = 1050 mA, POUT = 19 W AVG

f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF

Characteristic

Intermodulation DistortionGain

Drain Efficiency

Symbol

IMDGps

Min

———

Typ

–371525

Max

———

Units

dBcdB%

ηD

Two–Tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz

Characteristic

Gain

Drain Efficiency

Intermodulation Distortion

Symbol

Gps

Min

13.536—

Typ

1538–30

Max

——–28

Units

dB%dBcηD

IMD