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FDS8447 Single N-Channel PowerTrench® MOSFET

November 2006

FDS8447

Single N-Channel PowerTrench® MOSFET

40V, 12.8A, 10.5m

Features

Max rDS(on) = 10.5m at VGS = 10V, ID = 12.8A Max rDS(on) = 12.3m at VGS = 4.5V, ID = 11.4A Low gate charge

High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant

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General Description

Fairchild Semiconductor’s advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

DC - DC conversion

DDDD

SO-8

Pin 1

S

S

GS

DDDD

5678

4G321

SSS

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

SymbolVDSVGSIDEASPDTJ, TSTG

Drain to Source VoltageGate to Source Voltage

Drain Current -Continuous (Note 1a) -Pulsed Drain-Source Avalanche Energy (Note 3)Power Dissipation for Single Operation (Note 1a) (Note 1b)Operating and Storage Junction Temperature Range

Parameter

Ratings40±2012.8501502.51-55 to 150

UnitsVVAmJW°C

Thermal Characteristics

RθJARθJC

Thermal Resistance-Single operation, Junction to Ambient (Note 1a)Thermal Resistance, Junction to Case (Note 1)

5025

°C/W

Package Marking and Ordering Information

Device Marking

FDS8447

DeviceFDS8447

Reel Size13’’

Tape Width12mm

Quantity2500 units